SGB15N120ATMA1
IGBT 1200V 30A 198W TO263-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SGB15N120ATMA1 is a Non-Punch Through (NPT) Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This device offers a collector-emitter breakdown voltage of 1200 V and a continuous collector current rating of 30 A, with a pulsed capability of 52 A. Featuring a low on-state voltage of 3.6 V at 15 V gate-emitter voltage and 15 A collector current, with a maximum power dissipation of 198 W. The TO-263-3, D2PAK package facilitates surface mounting. Key switching characteristics include a gate charge of 130 nC and switching energy of 1.9 mJ, with typical turn-on and turn-off delays of 18 ns and 580 ns respectively, tested at 800 V, 15 A, 33 Ohm, and 15 V. This component is suitable for use in power conversion systems, motor drives, and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.6V @ 15V, 15A |
| Supplier Device Package | PG-TO263-3-2 |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 18ns/580ns |
| Switching Energy | 1.9mJ |
| Test Condition | 800V, 15A, 33Ohm, 15V |
| Gate Charge | 130 nC |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 52 A |
| Power - Max | 198 W |
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