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SGB06N60ATMA1

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SGB06N60ATMA1

IGBT 600V 12A 68W TO263-3

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies SGB06N60ATMA1 is an NPT IGBT with a 600 V collector-emitter breakdown voltage. This component features a 12 A continuous collector current (Ic) and a 24 A pulsed collector current (Icm). The on-state voltage (Vce(on)) is a maximum of 2.4 V at 15 V gate-emitter voltage and 6 A collector current, with typical switching times of 25 ns turn-on and 220 ns turn-off under test conditions of 400 V, 6 A, 50 Ohm, and 15 V. The gate charge is 32 nC, and the switching energy is 215 µJ. Rated for a maximum power dissipation of 68 W, it operates across a junction temperature range of -55°C to 150°C. The SGB06N60ATMA1 is supplied in a PG-TO263-3-2 surface mount package and is available on tape and reel. This device is suitable for applications in industrial power supplies and motor control.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 6A
Supplier Device PackagePG-TO263-3-2
IGBT TypeNPT
Td (on/off) @ 25°C25ns/220ns
Switching Energy215µJ
Test Condition400V, 6A, 50Ohm, 15V
Gate Charge32 nC
Current - Collector (Ic) (Max)12 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)24 A
Power - Max68 W

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