SGB02N120ATMA1
IGBT 1200V 6.2A 62W TO263-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SGB02N120ATMA1 is a high-performance NPT IGBT designed for demanding power switching applications. This component features a 1200V collector-emitter breakdown voltage and a continuous collector current of 6.2A, with a pulsed current capability of up to 9.6A. The device offers a maximum power dissipation of 62W and a low on-state voltage of 3.6V at 15V gate-emitter voltage and 2A collector current. Key switching characteristics include a turn-on delay of 23ns and a turn-off delay of 260ns at 25°C, with a switching energy of 220µJ under specified test conditions. The SGB02N120ATMA1 is housed in a PG-TO263-3-2 surface-mount package, suitable for automated assembly. It operates across a wide temperature range of -55°C to 150°C, making it a robust choice for industrial power supplies, motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.6V @ 15V, 2A |
| Supplier Device Package | PG-TO263-3-2 |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 23ns/260ns |
| Switching Energy | 220µJ |
| Test Condition | 800V, 2A, 91Ohm, 15V |
| Gate Charge | 11 nC |
| Current - Collector (Ic) (Max) | 6.2 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 9.6 A |
| Power - Max | 62 W |
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