IRGSL14C40LPBF
IGBT 430V 20A 125W TO262AAManufacturer: Infineon Technologies
Categories: Single IGBTs
Quality Control: Learn More
Infineon Technologies IRGSL14C40LPBF is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component offers a 430V collector-emitter breakdown voltage and a maximum continuous collector current of 20A, with a power dissipation capability of 125W. Featuring a logic gate input and a robust TO-262-3 Long Leads package, it is suitable for through-hole mounting. The device operates across a wide temperature range of -40°C to 175°C (TJ). Typical switching characteristics include a gate charge of 27 nC and on/off delays of 900ns/6µs at 25°C. The on-state voltage (Vce(on)) is specified at a maximum of 1.75V under 5V gate voltage and 14A collector current. This IGBT is commonly utilized in industrial motor control, power supplies, and automotive applications where efficient switching and high voltage handling are critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Logic |
| Vce(on) (Max) @ Vge, Ic | 1.75V @ 5V, 14A |
| Supplier Device Package | TO-262 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 900ns/6µs |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 27 nC |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 430 V |
| Power - Max | 125 W |
Request a Quote
Clients Also Buy
IRGS4055PBF
IGBT 300V 110A 255W D2PAK
IRG4CC40KB
IGBT CHIP
SGW20N60HS
IGBT NPT 600V 36A TO247-3
