IRGS4B60KD1TRLP
IGBT 600V 11A 63W D2PAKManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IGBT NPT 600 V, 11 A, 63 W, Surface Mount D2PAK. This component, part number IRGS4B60KD1TRLP, features a collector-emitter breakdown voltage of 600 V and a continuous collector current of 11 A. The NPT IGBT technology offers a low Vce(on) of 2.5 V at 15 V gate drive and 4 A collector current. With a pulsed collector current of 22 A and a maximum power dissipation of 63 W, it is suitable for applications requiring efficient switching. The D2PAK package (TO-263-3) facilitates surface mounting. Key parameters include a gate charge of 12 nC and switching energies of 73 µJ (on) and 47 µJ (off) under test conditions of 400 V, 4 A, 100 Ohms, and 15 V. This device finds application in power supplies, motor drives, and industrial automation. The component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 93 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 4A |
| Supplier Device Package | D2PAK |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 22ns/100ns |
| Switching Energy | 73µJ (on), 47µJ (off) |
| Test Condition | 400V, 4A, 100Ohm, 15V |
| Gate Charge | 12 nC |
| Current - Collector (Ic) (Max) | 11 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 22 A |
| Power - Max | 63 W |
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