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IRGS4640DTRRPBF

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IRGS4640DTRRPBF

DIODE 600V 24A D2PAK

Manufacturer: Infineon Technologies

Categories: Single IGBTs

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Infineon Technologies IRGS4640DTRRPBF is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current (Ic) rating of 65A, with a pulsed current capability (Icm) of 72A. The device exhibits a low on-state voltage (Vce(on)) of 1.9V at 15V gate-emitter voltage and 24A collector current. Switching characteristics include a turn-on delay (Td(on)) of 41ns and turn-off delay (Td(off)) of 104ns at 25°C, with a reverse recovery time (trr) of 89ns. The switching energy is specified at 115µJ for turn-on and 600µJ for turn-off, under test conditions of 400V and 24A. The IRGS4640DTRRPBF is packaged in a TO-263-3, D2PAK surface mount configuration, suitable for high-power density designs. This IGBT is widely utilized in industrial motor control, power supplies, and renewable energy systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)89 ns
Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 24A
Supplier Device PackageD2PAK
IGBT Type-
Td (on/off) @ 25°C41ns/104ns
Switching Energy115µJ (on), 600µJ (off)
Test Condition400V, 24A, 10Ohm, 15V
Gate Charge75 nC
Current - Collector (Ic) (Max)65 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)72 A
Power - Max250 W

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