IRGS30B60KPBF
IGBT 600V 78A 370W D2PAKManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IGBT NPT 600V, 30A, 2.35V Vce(on) IRGS30B60KPBF. This high-performance Insulated Gate Bipolar Transistor (IGBT) features a 600V collector-emitter breakdown voltage and a continuous collector current of 78A, with a pulsed capability of 120A. Designed for surface mount applications within a TO-263-3, D2PAK package, it offers a maximum power dissipation of 370W. Key switching parameters include a gate charge of 102nC and switching energies of 350µJ (on) and 825µJ (off) at 400V, 30A, 10 Ohm, 15V. Operating temperature range is -55°C to 175°C. This component is suitable for demanding applications in industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.35V @ 15V, 30A |
| Supplier Device Package | D2PAK |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 46ns/185ns |
| Switching Energy | 350µJ (on), 825µJ (off) |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Gate Charge | 102 nC |
| Current - Collector (Ic) (Max) | 78 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 370 W |
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