IRGS14C40L
IGBT 430V 20A 125W D2PAKManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IRGS14C40L is a high-voltage, high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This device features a 430V collector-emitter breakdown voltage and a continuous collector current capability of 20A, with a maximum power dissipation of 125W. The IRGS14C40L is housed in a surface-mount D2PAK (TO-263-3, D2PAK) package, facilitating efficient thermal management and automated assembly. Key electrical characteristics include a low on-state voltage (Vce(on)) of 1.75V at 5V gate-source voltage and 14A collector current, and a gate charge of 27 nC, contributing to efficient operation. Typical turn-on delay is 900ns with a turn-off delay of 6µs. Operating temperature ranges from -40°C to 175°C (TJ). This component is suitable for use in industrial motor drives, power supplies, and other power conversion systems.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Logic |
| Vce(on) (Max) @ Vge, Ic | 1.75V @ 5V, 14A |
| Supplier Device Package | D2PAK |
| IGBT Type | - |
| Td (on/off) @ 25°C | 900ns/6µs |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 27 nC |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 430 V |
| Power - Max | 125 W |
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