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IRGS10B60KDTRRP

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IRGS10B60KDTRRP

IGBT 600V 22A 156W D2PAK

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies IGBT NPT IRGS10B60KDTRRP offers a robust solution for high-voltage applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current of 22A, with a pulsed capability of 44A. Optimized for efficient switching, it exhibits switching energies of 140µJ (on) and 250µJ (off) at a test condition of 400V, 10A, 47O, 15V. The low on-state voltage of 2.2V at 15V gate-emitter voltage and 10A collector current, coupled with a gate charge of 38 nC, ensures minimal conduction losses. Housed in a D2PAK (TO-263-3) surface-mount package, this device is suitable for demanding thermal environments with an operating temperature range of -55°C to 150°C. Its 156W maximum power dissipation further enhances its utility in power conversion and motor control applications across industrial and automotive sectors. This device is supplied in a Tape & Reel (TR) configuration.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)90 ns
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 10A
Supplier Device PackageD2PAK
IGBT TypeNPT
Td (on/off) @ 25°C30ns/230ns
Switching Energy140µJ (on), 250µJ (off)
Test Condition400V, 10A, 47Ohm, 15V
Gate Charge38 nC
Current - Collector (Ic) (Max)22 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)44 A
Power - Max156 W

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