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IRGR4607DTRRPBF

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IRGR4607DTRRPBF

IGBT 600V 11A TO252AA

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies IRGR4607DTRRPBF is a 600V, 11A Insulated Gate Bipolar Transistor (IGBT) designed for surface mounting in a TO-252AA (DPAK) package. This component offers a continuous collector current of 11A, with a pulsed capability of 12A. It features a maximum power dissipation of 58W and a high operating temperature range of -40°C to 175°C. Key electrical characteristics include a gate charge of 9 nC, a collector-emitter on-voltage (Vce(on)) of 2.05V at 15V gate-emitter voltage and 4A collector current, and a reverse recovery time (trr) of 48 ns. Switching energy is specified at 140µJ (on) and 62µJ (off) under test conditions of 400V, 4A, 100 Ohms, and 15V. This IGBT is commonly utilized in power supply, motor control, and industrial automation applications. The device is supplied in tape and reel packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)48 ns
Vce(on) (Max) @ Vge, Ic2.05V @ 15V, 4A
Supplier Device PackageTO-252AA (DPAK)
IGBT Type-
Td (on/off) @ 25°C27ns/120ns
Switching Energy140µJ (on), 62µJ (off)
Test Condition400V, 4A, 100Ohm, 15V
Gate Charge9 nC
Current - Collector (Ic) (Max)11 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)12 A
Power - Max58 W

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