IRGPS66160DPBF
IGBT 600V 160A SUPER247Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IGBT IRGPS66160DPBF is a high-performance Insulated Gate Bipolar Transistor designed for demanding power applications. This component features a 600 V collector-emitter breakdown voltage and a continuous collector current capability of 240 A, with a pulsed current rating of 360 A. The device is optimized for fast switching with a typical turn-on delay of 80 ns and turn-off delay of 190 ns at 25°C. Its low on-state voltage of 1.95 V at 15 V gate-emitter voltage and 120 A collector current, along with a maximum power dissipation of 750 W, ensure efficient operation. The IRGPS66160DPBF includes a gate charge of 220 nC and a reverse recovery time of 95 ns. Packaged in a SUPER-247™ (TO-274AA) through-hole configuration, this IGBT is suited for industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-274AA |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 95 ns |
| Vce(on) (Max) @ Vge, Ic | 1.95V @ 15V, 120A |
| Supplier Device Package | SUPER-247™ (TO-274AA) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 80ns/190ns |
| Switching Energy | 4.47mJ (on), 3.43mJ (off) |
| Test Condition | 400V, 120A, 4.7Ohm, 15V |
| Gate Charge | 220 nC |
| Current - Collector (Ic) (Max) | 240 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 360 A |
| Power - Max | 750 W |
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