IRGPH50F
IGBT FAST 1200V 45A TO-247ACManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IRGPH50F is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component features a robust 1200 V collector-emitter breakdown voltage and a maximum collector current of 45 A, supported by a 200 W maximum power dissipation. The device offers a low on-state voltage of 2.9 V at 15 V gate-emitter voltage and 25 A collector current, ensuring efficient power transfer. Its standard input type and through-hole mounting in a TO-247AC package facilitate integration into established circuit designs. The IRGPH50F operates across a wide temperature range of -55°C to 150°C (TJ), making it suitable for industrial motor drives, uninterruptible power supplies (UPS), and power solar inverters.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BagDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bag |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 25A |
| Supplier Device Package | TO-247AC |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 45 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 200 W |
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