IRGPF50F
IGBT FAST 900V 51A TO-247ACManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IRGPF50F is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component features a 900V collector-emitter breakdown voltage and a continuous collector current capability of 51A, with a maximum power dissipation of 200W. The IRGPF50F utilizes a standard input type and is housed in a TO-247AC package, facilitating through-hole mounting. Its optimized switching characteristics and low on-state voltage (Vce(on) of 2.7V @ 15V, 28A) make it suitable for use in power factor correction, inverters, and motor control systems across industrial and automotive sectors. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BagDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bag |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 28A |
| Supplier Device Package | TO-247AC |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 51 A |
| Voltage - Collector Emitter Breakdown (Max) | 900 V |
| Power - Max | 200 W |
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