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IRGPC30FD2

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IRGPC30FD2

IGBT W/DIODE 600V 31A TO-247AC

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies IRGPC30FD2 is a 600V, 31A Insulated Gate Bipolar Transistor (IGBT) with an integrated diode, housed in a TO-247AC package. This through-hole component offers a maximum collector current of 31A and a collector-emitter breakdown voltage of 600V. The device features a Vce(on) of 2.1V at 15V gate-emitter voltage and 17A collector current, with a maximum power dissipation of 100W. Operating temperature range is -55°C to 150°C. This component is suitable for applications in industrial motor drives, power supplies, and welding equipment.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bag
Technical Details:
PackagingBag
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 17A
Supplier Device PackageTO-247AC
IGBT Type-
Current - Collector (Ic) (Max)31 A
Voltage - Collector Emitter Breakdown (Max)600 V
Power - Max100 W

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