IRGP6690DPBF
IGBT 600V 140A 483W TO247ACManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IGBT IRGP6690DPBF is a high-performance Insulated Gate Bipolar Transistor designed for demanding applications. This component features a 600 V breakdown voltage and a continuous collector current of 140 A, with a pulsed current capability of 225 A. The maximum power dissipation is rated at 483 W. Key electrical characteristics include a Vce(on) of 1.95 V at 15 V gate drive and 75 A collector current, a gate charge of 140 nC, and switching energies of 3.1 mJ (turn-on) and 2.8 mJ (turn-off) under specified test conditions. The device operates over an extended temperature range of -40°C to 175°C (TJ). Packaged in a TO-247-3 (TO-247AC) through-hole configuration, this IGBT is suitable for power conversion systems in industrial power supplies, motor drives, and renewable energy applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 90 ns |
| Vce(on) (Max) @ Vge, Ic | 1.95V @ 15V, 75A |
| Supplier Device Package | TO-247AC |
| IGBT Type | - |
| Td (on/off) @ 25°C | 85ns/222ns |
| Switching Energy | 3.1mJ (on), 2.8mJ (off) |
| Test Condition | 400V, 75A, 10Ohm, 15V |
| Gate Charge | 140 nC |
| Current - Collector (Ic) (Max) | 140 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 225 A |
| Power - Max | 483 W |
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