IRGP6690D-EPBF
IGBT 600V 90A TO247ADManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IRGP6690D-EPBF is a 600V Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This through-hole component, packaged in a TO-247AD, offers a continuous collector current of 140A and a pulsed collector current of 225A. Key performance metrics include a maximum power dissipation of 483W and a collector-emitter saturation voltage (Vce(on)) of 1.95V at 15V gate-emitter voltage and 75A collector current. The device exhibits a typical gate charge of 140 nC and boasts switching energies of 2.4mJ (on) and 2.2mJ (off) under specified test conditions (400V, 75A, 10 Ohm, 15V). With an operating temperature range of -40°C to 175°C, this IGBT is suitable for demanding environments. It finds application in power conversion systems, motor drives, and industrial power supplies.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 90 ns |
| Vce(on) (Max) @ Vge, Ic | 1.95V @ 15V, 75A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 85ns/222ns |
| Switching Energy | 2.4mJ (on), 2.2mJ (off) |
| Test Condition | 400V, 75A, 10Ohm, 15V |
| Gate Charge | 140 nC |
| Current - Collector (Ic) (Max) | 140 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 225 A |
| Power - Max | 483 W |
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