IRGP4760D-EPBF
IGBT 650V TO-247Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IGBT IRGP4760D-EPBF is a 650V, 90A insulated gate bipolar transistor designed for high-performance power switching applications. This component features a low Vce(on) of 2V at 15V gate-emitter voltage and 48A collector current, with a maximum power dissipation of 325W. The IRGP4760D-EPBF offers excellent switching characteristics, with typical turn-on and turn-off delays of 70ns and 140ns respectively, and a reverse recovery time of 170ns. Its high collector current capability of 144A pulsed and a gate charge of 145nC make it suitable for demanding applications in industrial power supplies, motor control, and high-voltage converters. Packaged in a TO-247-3 through-hole configuration, this device operates within a temperature range of -40°C to 175°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 170 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 48A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 70ns/140ns |
| Switching Energy | 1.7mJ (on), 1mJ (off) |
| Test Condition | 400V, 48A, 10Ohm, 15V |
| Gate Charge | 145 nC |
| Current - Collector (Ic) (Max) | 90 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 144 A |
| Power - Max | 325 W |
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