IRGP4055DPBF
IGBT 300V 110A 255W TO247ACManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IRGP4055DPBF is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This trench IGBT features a collector-emitter breakdown voltage of 300 V and can handle a continuous collector current of up to 110 A. With a maximum power dissipation of 255 W and a low on-state voltage (Vce(on)) of 2.1 V at 15 V gate voltage and 110 A collector current, it ensures efficient power conversion. The device exhibits typical turn-on delay (Td(on)) of 44 ns and turn-off delay (Td(off)) of 245 ns at 25°C, with a reverse recovery time (trr) of 27 ns. Its gate charge is 132 nC. The IRGP4055DPBF is housed in a standard TO-247-3 package for through-hole mounting, operating across a temperature range of -40°C to 150°C. This component is well-suited for use in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BagDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bag |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 27 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 110A |
| Supplier Device Package | TO-247AC |
| IGBT Type | Trench |
| Td (on/off) @ 25°C | 44ns/245ns |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 132 nC |
| Current - Collector (Ic) (Max) | 110 A |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 255 W |