IRGC50B60PB
IGBT CHIPManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IGBT CHIP, part number IRGC50B60PB, is an NPT (Non-Punch-Through) insulated-gate bipolar transistor presented as a bare die for surface-mount applications. This component offers a 600V collector-emitter breakdown voltage with a maximum Vce(on) of 1.65V at 15V gate-emitter voltage and 10A collector current. Designed for high-performance switching, this IGBT is suitable for demanding applications in industrial power supplies, motor control, and electric vehicle powertrains where efficient power conversion is critical. Its die form factor allows for optimized thermal management and custom integration into advanced power modules.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.65V @ 15V, 10A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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