IRGC50B120UB
IGBT CHIPManufacturer: Infineon Technologies
Categories: Single IGBTs
Quality Control: Learn More
Infineon Technologies' IRGC50B120UB is an NPT IGBT chip designed for high-voltage applications. This surface-mount die offers a collector-emitter breakdown voltage of 1200 V and a continuous collector current capability of 50 A. The on-state voltage drop at the specified test conditions is a maximum of 3.5 V. This component is suitable for demanding power electronics designs across various industries, including industrial motor control, renewable energy systems, and power supplies. The bulk packaging ensures efficient handling in high-volume manufacturing environments.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.5V @ 15V, 50A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
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