IRGC49B120UB
IGBT CHIPManufacturer: Infineon Technologies
Categories: Single IGBTs
Quality Control: Learn More
Infineon Technologies IRGC49B120UB is an NPT IGBT chip designed for high-voltage power switching applications. This bare die component offers a 1200 V collector-emitter breakdown voltage and a continuous collector current capability of 50 A at a Vce(on) of 2.25V (tested at 15V Vge and 10A Ic). The surface mount die package is suitable for demanding power electronics designs. This component is commonly utilized in industrial power supplies, electric vehicle powertrains, and renewable energy inverters. The bulk packaging ensures efficient integration into high-volume manufacturing processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.25V @ 15V, 10A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
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