IRGC4275B
IGBT CHIPManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IGBT Die, IRGC4275B. This discrete power semiconductor is designed for high-performance applications requiring robust switching capabilities. Featuring a 650 V collector-emitter breakdown voltage, this IGBT die is optimized for surface mount configurations. Key electrical specifications include a maximum on-state voltage (Vce(on)) of 1.9V at 15V gate-emitter voltage and 200A collector current. The typical turn-on delay (Td(on)) is 130 ns and turn-off delay (Td(off)) is 280 ns at 25°C, under test conditions of 400V, 200A, and 5 Ohm with a 15V gate drive. With a high operating temperature range of -40°C to 175°C (TJ), this component is suitable for demanding environments. The IRGC4275B finds application in power supplies, motor drives, and other industrial power conversion systems. Supplied in bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 200A |
| Supplier Device Package | Die |
| IGBT Type | - |
| Td (on/off) @ 25°C | 130ns/280ns |
| Switching Energy | - |
| Test Condition | 400V, 200A, 5Ohm, 15V |
| Gate Charge | 380 nC |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
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