IRGC4274B
IGBT CHIPManufacturer: Infineon Technologies
Categories: Single IGBTs
Quality Control: Learn More
Infineon Technologies IRGC4274B is a high-performance Trench IGBT die designed for demanding power conversion applications. This component offers a 650 V collector-emitter breakdown voltage, making it suitable for medium-voltage systems. With a Vce(on) of 1.9 V at 15V gate drive and 150A, it minimizes conduction losses. The device exhibits typical turn-on and turn-off times of 95 ns and 220 ns respectively at 25°C, facilitating efficient high-frequency switching. The IRGC4274B operates across a wide temperature range of -40°C to 175°C (TJ) and is supplied in bulk die form for advanced packaging integration. Key applications include industrial motor drives, uninterruptible power supplies (UPS), and renewable energy systems where robust performance and thermal management are critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 150A |
| Supplier Device Package | Die |
| IGBT Type | Trench |
| Td (on/off) @ 25°C | 95ns/220ns |
| Switching Energy | - |
| Test Condition | 400V, 150A, 5Ohm, 15V |
| Gate Charge | 310 nC |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
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