IRGC4066B
IGBT CHIPManufacturer: Infineon Technologies
Categories: Single IGBTs
Quality Control: Learn More
Infineon Technologies' IRGC4066B is a Trench IGBT die designed for high-performance power switching applications. This component features a 600 V collector-emitter breakdown voltage and a maximum collector current of 75 A, specified under test conditions of 400 V, 75 A, 10 Ohm, and 15 V gate drive. The on-state voltage drop (Vce(on)) is 2.1 V at 15 V gate-emitter voltage and 75 A collector current. With a gate charge of 150 nC, the IRGC4066B offers efficient switching characteristics, with typical turn-on and turn-off delays of 50 ns and 200 ns respectively at 25°C. Operating across a wide temperature range of -55°C to 175°C, this device is supplied as a bulk die, suitable for advanced surface mount configurations. It finds application in demanding sectors such as industrial motor control, power supplies, and automotive electronics where robust power handling is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 75A |
| Supplier Device Package | Die |
| IGBT Type | Trench |
| Td (on/off) @ 25°C | 50ns/200ns |
| Switching Energy | - |
| Test Condition | 400V, 75A, 10Ohm, 15V |
| Gate Charge | 150 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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