IRGC25B120UB
IGBT CHIPManufacturer: Infineon Technologies
Categories: Single IGBTs
Quality Control: Learn More
The Infineon Technologies IRGC25B120UB is a high-performance NPT IGBT die designed for demanding power applications. This component offers a robust 1200 V collector-emitter breakdown voltage and a continuous collector current capability of 25 A. The IRGC25B120UB features a low on-state voltage of 2.7V at 15V gate-emitter voltage and 10A collector current, contributing to reduced conduction losses. Its surface-mount die package, supplied in bulk, is suitable for high-density power module integration. This IGBT is commonly utilized in industrial motor drives, uninterruptible power supplies (UPS), and solar inverters where efficient high-voltage switching is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 10A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Current - Collector (Ic) (Max) | 25 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
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