IRGC100B60KC
IGBT CHIPManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IRGC100B60KC is a high-performance Insulated Gate Bipolar Transistor (IGBT) chip designed for demanding power applications. This surface mount die offers a 600 V collector-emitter breakdown voltage and a continuous collector current capability of 100 A, making it suitable for power factor correction, motor drives, and uninterruptible power supply (UPS) systems. The device features a standard input type and a reverse recovery time of 130 ns, contributing to efficient switching performance. Supplied in bulk packaging, this IGBT chip is a critical component for advanced power conversion and control solutions across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 130 ns |
| Vce(on) (Max) @ Vge, Ic | - |
| Supplier Device Package | Die |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Current - Collector (Ic) (Max) | 100 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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