IRGC100B120UB
IGBT CHIPManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IRGC100B120UB is a high-performance NPT IGBT die designed for demanding power switching applications. This component features a 1200 V collector-emitter breakdown voltage and a maximum continuous collector current of 100 A, with a specified on-state voltage of 3.5 V at 15 V gate-emitter voltage and 100 A collector current. The IRGC100B120UB is suitable for surface mount integration and is supplied in bulk packaging as a die. Its robust construction and electrical characteristics make it a reliable choice for power factor correction, motor control, and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.5V @ 15V, 100A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Current - Collector (Ic) (Max) | 100 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
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