IRGC100B120KB
IGBT CHIPManufacturer: Infineon Technologies
Categories: Single IGBTs
Quality Control: Learn More
Infineon Technologies IGBT Die, IRGC100B120KB. This NPT (Non-Punch Through) IGBT features a collector-emitter breakdown voltage of 1200 V and a maximum continuous collector current of 100 A. The Vce(on) is specified at 2.6 V at a gate-emitter voltage of 15 V and 100 A. Designed for surface mount applications, this component is supplied in a Die package for advanced thermal management and direct integration into power modules. Its robust construction and performance characteristics make it suitable for demanding applications in industrial power, electric vehicle powertrains, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 100A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Current - Collector (Ic) (Max) | 100 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
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