IRGBC30FD2
IGBT W/DIODE 600V 31A TO-220ABManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IRGBC30FD2 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component features a robust 600V collector-emitter breakdown voltage and a maximum continuous collector current of 31A. Its low on-state voltage, specified at 2.1V maximum at 15V gate-emitter voltage and 17A collector current, minimizes conduction losses. With a maximum power dissipation of 100W and an operating temperature range of -55°C to 150°C (TJ), the IRGBC30FD2 is suitable for high-temperature environments. The standard input type and through-hole mounting in the TO-220AB package facilitate integration into various power circuits. This IGBT is commonly utilized in industrial motor control, power factor correction, and uninterruptible power supply (UPS) systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 17A |
| Supplier Device Package | TO-220AB |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 31 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Power - Max | 100 W |
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