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IRGBC30F

IGBT FAST 600V 31A TO-220AB

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies IRGBC30F is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current capability of 31A, with a maximum power dissipation of 100W. The IRGBC30F offers a low on-state voltage of 2.1V at 15V gate-emitter voltage and 17A collector current, ensuring efficient power transfer. Its standard input type and through-hole mounting in a TO-220AB package facilitate integration into various power circuits. Operating across a wide temperature range from -55°C to 150°C (TJ), this IGBT is suitable for industrial applications such as motor control, power supplies, and welding equipment. Packaged in tubes for bulk handling.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 17A
Supplier Device PackageTO-220AB
IGBT Type-
Current - Collector (Ic) (Max)31 A
Voltage - Collector Emitter Breakdown (Max)600 V
Power - Max100 W

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