IRGBC20UD2
IGBT W/DIODE 600V 13A TO-220ABManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IGBT W/DIODE, part number IRGBC20UD2, is a high-performance insulated-gate bipolar transistor designed for demanding applications. This component features a 600 V collector-emitter breakdown voltage and a continuous collector current capability of 13 A, with a maximum power dissipation of 60 W. The device exhibits a Vce(on) of 3V at 15V gate-emitter voltage and 6.5A collector current. Packaged in a TO-220AB through-hole configuration, the IRGBC20UD2 offers standard input type and operates across a wide temperature range from -55°C to 150°C (TJ). This robust IGBT is suitable for use in industrial motor drives, power supplies, and other power switching applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 6.5A |
| Supplier Device Package | TO-220AB |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 13 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Power - Max | 60 W |
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