IRGB6B60KDPBF
IGBT 600V 13A 90W TO220ABManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IGBT, part number IRGB6B60KDPBF, is an NPT type insulated gate bipolar transistor. This component features a collector-emitter voltage rating of 600V and a continuous collector current of 13A, with a pulsed capability of 26A. The maximum power dissipation is 90W. Key electrical characteristics include a gate charge of 18.2 nC and a Vce(on) of 2.2V at 15V gate-source voltage and 5A collector current. Switching energy is specified at 110µJ (on) and 135µJ (off), with typical on/off delay times of 25ns and 215ns respectively at 25°C. The device operates across a temperature range of -55°C to 150°C. Packaged in a TO-220AB through-hole configuration, this component is suitable for applications in industrial and power electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 70 ns |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 5A |
| Supplier Device Package | TO-220AB |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 25ns/215ns |
| Switching Energy | 110µJ (on), 135µJ (off) |
| Test Condition | 400V, 5A, 100Ohm, 15V |
| Gate Charge | 18.2 nC |
| Current - Collector (Ic) (Max) | 13 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 26 A |
| Power - Max | 90 W |
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