IRGB4620DPBF
IGBT 600V 32A 140W TO220Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IRGB4620DPBF is a robust Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 32A, with a pulsed capability of 36A. It offers a maximum power dissipation of 140W and a low on-state voltage (Vce(on)) of 1.85V at 15V gate-emitter voltage and 12A collector current. The IRGB4620DPBF exhibits typical turn-on delay of 31ns and turn-off delay of 83ns, with switching energies of 75µJ (on) and 225µJ (off) at the specified test conditions. The device is housed in a standard TO-220AC package for through-hole mounting and operates across an industrial temperature range of -40°C to 175°C. This component is frequently utilized in industrial motor control, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 68 ns |
| Vce(on) (Max) @ Vge, Ic | 1.85V @ 15V, 12A |
| Supplier Device Package | TO-220AC |
| IGBT Type | - |
| Td (on/off) @ 25°C | 31ns/83ns |
| Switching Energy | 75µJ (on), 225µJ (off) |
| Test Condition | 400V, 12A, 22Ohm, 15V |
| Gate Charge | 25 nC |
| Current - Collector (Ic) (Max) | 32 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 36 A |
| Power - Max | 140 W |
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