IRG8P08N120KDPBF
IGBT 1200V 15A 89W TO-247ACManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IRG8P08N120KDPBF is a robust N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a collector-emitter breakdown voltage of 1200 V and a continuous collector current capability of 15 A at a case temperature of 25°C, with a pulsed current rating (Icm) also at 15 A. The device offers a maximum power dissipation of 89 W and a low on-state voltage (Vce(on)) of 2 V at 15 V gate-emitter voltage and 5 A collector current. Key switching characteristics include a gate charge of 45 nC and switching energy values of 300 µJ (on) and 300 µJ (off) under test conditions of 600 V, 5 A, 47 Ohm, and 15 V. The transistor exhibits typical turn-on delay (Td(on)) of 20 ns and turn-off delay (Td(off)) of 160 ns at 25°C. Packaged in a TO-247-3 (TO-247AC) through-hole format, this IGBT is suitable for demanding industrial power switching applications, including motor drives and power factor correction circuits, operating within a temperature range of -40°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 50 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 5A |
| Supplier Device Package | TO-247AC |
| IGBT Type | - |
| Td (on/off) @ 25°C | 20ns/160ns |
| Switching Energy | 300µJ (on), 300µJ (off) |
| Test Condition | 600V, 5A, 47Ohm, 15V |
| Gate Charge | 45 nC |
| Current - Collector (Ic) (Max) | 15 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 15 A |
| Power - Max | 89 W |
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