IRG7PH35UDPBF
IGBT TRENCH 1200V 50A TO247ACManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IGBT TRENCH IRG7PH35UDPBF is a high-performance insulated-gate bipolar transistor designed for demanding power applications. Featuring a 1200V collector-emitter breakdown voltage and a continuous collector current of 50A (60A pulsed), this device offers robust power handling capabilities. The Trench IGBT architecture ensures efficient switching performance with specified switching energies of 1.06mJ (on) and 620µJ (off) at 600V and 20A. Key parameters include a Vce(on) of 2.2V at 15V gate-emitter voltage and 20A collector current, a gate charge of 85 nC, and a reverse recovery time of 105 ns. With a maximum power dissipation of 180W and an operating temperature range of -55°C to 150°C (TJ), the IRG7PH35UDPBF is suitable for use in industrial motor drives, power supplies, and renewable energy systems. The component is supplied in a TO-247AC package for through-hole mounting.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 105 ns |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 20A |
| Supplier Device Package | TO-247AC |
| IGBT Type | Trench |
| Td (on/off) @ 25°C | 30ns/160ns |
| Switching Energy | 1.06mJ (on), 620µJ (off) |
| Test Condition | 600V, 20A, 10Ohm, 15V |
| Gate Charge | 85 nC |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 60 A |
| Power - Max | 180 W |
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