IRG7CH73K10EF-R
IGBT 1200V ULTRA FAST DIEManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IRG7CH73K10EF-R is a 1200V ULTRA FAST IGBT die designed for high-performance power switching applications. This surface mount die features a collector-emitter breakdown voltage of 1200V and a low on-state voltage (Vce(on)) of 1.6V at 15V gate-emitter voltage and 20A collector current. The typical turn-on delay (Td(on)) is 105ns and turn-off delay (Td(off)) is 45ns at 25°C, tested under 600V, 75A, 5Ohm, 15V conditions. With a gate charge of 420 nC and an operating junction temperature range of -40°C to 175°C, this component is suitable for demanding industrial environments. The IRG7CH73K10EF-R is particularly relevant for applications in industrial motor drives and power supplies where efficient and fast switching is critical. Supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.6V @ 15V, 20A |
| Supplier Device Package | Die |
| IGBT Type | - |
| Td (on/off) @ 25°C | 105ns/45ns |
| Switching Energy | - |
| Test Condition | 600V, 75A, 5Ohm, 15V |
| Gate Charge | 420 nC |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
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