IRG7CH73K10EF
IGBT 1200V ULTRA FAST DIEManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IRG7CH73K10EF is a high-performance IGBT die designed for demanding applications. This component features a 1200V collector-emitter breakdown voltage and a low Vce(on) of 1.6V at 15V gate-emitter voltage and 20A collector current. Optimized for ultra-fast switching, it exhibits typical turn-on delay (Td(on)) of 63ns and turn-off delay (Td(off)) of 267ns at 25°C, under test conditions of 600V, 75A, and 4.7 Ohm with 15V gate drive. The device has a gate charge of 360 nC. Operating across a wide temperature range of -40°C to 175°C (TJ), it is suitable for use in power factor correction, electric vehicle powertrains, and industrial motor control systems. The IRG7CH73K10EF is supplied as a bare die in bulk packaging, requiring surface mounting.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.6V @ 15V, 20A |
| Supplier Device Package | Die |
| IGBT Type | - |
| Td (on/off) @ 25°C | 63ns/267ns |
| Switching Energy | - |
| Test Condition | 600V, 75A, 4.7Ohm, 15V |
| Gate Charge | 360 nC |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
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