IRG7CH35UED
IGBT 1200V ULTRA FAST DIEManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IRG7CH35UED is an IGBT (Insulated Gate Bipolar Transistor) presented in bulk packaging. This power semiconductor device features a 1200V breakdown voltage and is engineered for ultra-fast switching applications. Its robust construction and high performance characteristics make it suitable for demanding power electronics designs across various industries, including industrial motor control, renewable energy systems, and high-efficiency power supplies. The IRG7CH35UED offers excellent thermal management capabilities and low conduction losses, contributing to overall system efficiency and reliability. This discrete component is a key building block for power conversion circuits requiring rapid switching speeds and high voltage handling.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
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