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IRG4RC10UDPBF

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IRG4RC10UDPBF

IGBT 600V 8.5A TO252AA

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies IGBT, part number IRG4RC10UDPBF, is a 600V, 8.5A Insulated Gate Bipolar Transistor with a maximum power dissipation of 38W. This device features a TO-252AA (DPAK) surface-mount package for efficient thermal management. Key parameters include a collector current of 8.5A (34A pulsed), a gate charge of 15 nC, and a Vce(on) of 2.6V at 15V gate-emitter voltage and 5A collector current. Switching characteristics are specified with a turn-on delay of 40ns and turn-off delay of 87ns at 25°C, and a reverse recovery time of 28ns. The IRG4RC10UDPBF is suitable for applications in industrial motor control and power supply systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)28 ns
Vce(on) (Max) @ Vge, Ic2.6V @ 15V, 5A
Supplier Device PackageTO-252AA (DPAK)
IGBT Type-
Td (on/off) @ 25°C40ns/87ns
Switching Energy140µJ (on), 120µJ (off)
Test Condition480V, 5A, 100Ohm, 15V
Gate Charge15 nC
Current - Collector (Ic) (Max)8.5 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)34 A
Power - Max38 W

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