IRG4RC10UD
IGBT 600V 8.5A 38W DPAKManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IRG4RC10UD is a 600V, 8.5A Insulated Gate Bipolar Transistor (IGBT) in a TO-252AA (DPAK) surface mount package. This device offers a maximum power dissipation of 38W and a pulsed collector current of 34A. Key electrical characteristics include a Vce(on) of 2.6V at 15V Gate-Emitter voltage and 5A collector current. Switching performance is defined by a typical turn-on delay of 40ns and turn-off delay of 87ns at 25°C, with switching energies of 140µJ (on) and 120µJ (off) under a test condition of 480V, 5A, 100 Ohm, and 15V. The Gate Charge is specified at 15 nC, and the reverse recovery time is 28 ns. Operating temperature ranges from -55°C to 150°C. This component is suitable for applications in power supply units and industrial motor control.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 28 ns |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 5A |
| Supplier Device Package | TO-252AA (DPAK) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 40ns/87ns |
| Switching Energy | 140µJ (on), 120µJ (off) |
| Test Condition | 480V, 5A, 100Ohm, 15V |
| Gate Charge | 15 nC |
| Current - Collector (Ic) (Max) | 8.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 34 A |
| Power - Max | 38 W |
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