IRG4RC10STRRPBF
IGBT 600V 14A TO252AAManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IGBT IRG4RC10STRRPBF is a 600V, 14A Insulated Gate Bipolar Transistor designed for surface mount applications. This component features a maximum collector current of 18A pulsed and a power dissipation of 38W. The IRG4RC10STRRPBF is housed in a TO-252AA (DPAK) package, facilitating efficient thermal management and automated assembly. Key electrical characteristics include a Vce(on) of 1.8V at 15V gate-emitter voltage and 8A collector current, with a gate charge of 15 nC. Switching performance is specified with on and off switching energies of 140µJ and 2.58mJ respectively, at 480V, 8A, 100 Ohm, 15V test conditions. The operating temperature range is -55°C to 150°C. This device is commonly employed in power supply units, motor control, and industrial automation applications. It is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 8A |
| Supplier Device Package | TO-252AA (DPAK) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 25ns/630ns |
| Switching Energy | 140µJ (on), 2.58mJ (off) |
| Test Condition | 480V, 8A, 100Ohm, 15V |
| Gate Charge | 15 nC |
| Current - Collector (Ic) (Max) | 14 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 18 A |
| Power - Max | 38 W |