IRG4RC10STRL
IGBT 600V 14A 38W DPAKManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IRG4RC10STRL is a 600V Insulated Gate Bipolar Transistor (IGBT) designed for robust performance in demanding applications. This component features a 14A continuous collector current (Ic) with a pulsed capability of 18A (Icm). The IRG4RC10STRL offers a low on-state voltage (Vce(on)) of 1.8V at 15V Vge and 8A Ic, with a maximum power dissipation of 38W. Its switching characteristics include a gate charge of 15 nC and switching energy values of 140µJ (on) and 2.58mJ (off) under test conditions of 480V, 8A, 100 Ohm, and 15V. Packaged in a TO-252AA (DPAK) surface-mount form factor, this device operates within a temperature range of -55°C to 150°C. Typical industries utilizing this IGBT include industrial motor control, power supplies, and lighting applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 8A |
| Supplier Device Package | TO-252AA (DPAK) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 25ns/630ns |
| Switching Energy | 140µJ (on), 2.58mJ (off) |
| Test Condition | 480V, 8A, 100Ohm, 15V |
| Gate Charge | 15 nC |
| Current - Collector (Ic) (Max) | 14 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 18 A |
| Power - Max | 38 W |
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