IRG4RC10STR
IGBT 600V 14A 38W DPAKManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IGBT IRG4RC10STR is a 600V, 14A Insulated Gate Bipolar Transistor designed for high-efficiency power switching applications. This component features a maximum collector current of 14A and a pulsed collector current capability of 18A. The Vce(on) is rated at 1.8V at 15V gate-emitter voltage and 8A collector current, with a gate charge of 15nC. Its low switching energy, with 140µJ on and 2.58mJ off under test conditions of 480V, 8A, 100 Ohm, and 15V, contributes to reduced power loss in demanding applications. The IRG4RC10STR is packaged in a TO-252AA (DPAK) surface mount case, suitable for high-density board designs. Operating temperature range is -55°C to 150°C. This device finds utility in various industrial sectors including motor control, uninterruptible power supplies (UPS), and power factor correction (PFC) circuits. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 8A |
| Supplier Device Package | TO-252AA (DPAK) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 25ns/630ns |
| Switching Energy | 140µJ (on), 2.58mJ (off) |
| Test Condition | 480V, 8A, 100Ohm, 15V |
| Gate Charge | 15 nC |
| Current - Collector (Ic) (Max) | 14 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 18 A |
| Power - Max | 38 W |
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