IRG4RC10SDPBF
IGBT 600V 14A TO252AAManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IRG4RC10SDPBF is a 600V Insulated Gate Bipolar Transistor (IGBT) designed for surface mount applications. This component features a 14A continuous collector current (Ic) and an 18A pulsed collector current (Icm). The IGBT exhibits a maximum on-state voltage (Vce(on)) of 1.8V at 15V gate-emitter voltage and 8A collector current. With a gate charge of 15 nC and switching energy of 310µJ (on) and 3.28mJ (off) under test conditions of 480V, 8A, 100 Ohm, and 15V, it offers efficient switching characteristics. The device is housed in a TO-252AA (DPAK) package, delivering a maximum power dissipation of 38W and operating across a junction temperature range of -55°C to 150°C. This IGBT is suitable for use in industrial automation, power supplies, and motor control applications.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 28 ns |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 8A |
| Supplier Device Package | TO-252AA (DPAK) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 76ns/815ns |
| Switching Energy | 310µJ (on), 3.28mJ (off) |
| Test Condition | 480V, 8A, 100Ohm, 15V |
| Gate Charge | 15 nC |
| Current - Collector (Ic) (Max) | 14 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 18 A |
| Power - Max | 38 W |
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