IRG4RC10SD
IGBT 600V 14A 38W DPAKManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IRG4RC10SD is a 600V Insulated Gate Bipolar Transistor (IGBT) designed for surface mount applications. This component offers a continuous collector current of 14A, with a pulsed collector current capability of 18A. Featuring a low on-state voltage of 1.8V at 15V gate-emitter voltage and 8A collector current, it minimizes conduction losses. The device exhibits a gate charge of 15 nC and a specified switching energy of 310µJ (on) and 3.28mJ (off) under test conditions of 480V, 8A, 100 Ohm, and 15V. The IRG4RC10SD is packaged in a TO-252AA (DPAK) surface mount configuration, suitable for high power density designs. Its operational temperature range is -55°C to 150°C (TJ). This IGBT is utilized in power switching applications across various industries, including industrial automation and power supplies.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 28 ns |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 8A |
| Supplier Device Package | TO-252AA (DPAK) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 76ns/815ns |
| Switching Energy | 310µJ (on), 3.28mJ (off) |
| Test Condition | 480V, 8A, 100Ohm, 15V |
| Gate Charge | 15 nC |
| Current - Collector (Ic) (Max) | 14 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 18 A |
| Power - Max | 38 W |
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