IRG4RC10KD
IGBT 600V 9A 38W DPAKManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IRG4RC10KD is a 600 V, 9 A Insulated Gate Bipolar Transistor (IGBT) designed for surface mount applications. This component features a maximum continuous collector current of 9 A and a pulsed collector current of 18 A. The IGBT exhibits a gate charge of 19 nC and a maximum on-state collector-emitter voltage (Vce(on)) of 2.62 V at 15 V gate-emitter voltage and 5 A collector current. Switching characteristics include a typical turn-on delay (Td(on)) of 49 ns and a turn-off delay (Td(off)) of 97 ns at 25°C, with a reverse recovery time (trr) of 28 ns. The power dissipation is rated at 38 W, and it operates within an ambient temperature range of -55°C to 150°C. The package format is TO-252-3, DPAK (SC-63). This component is suitable for industrial automation, power supplies, and motor control applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 28 ns |
| Vce(on) (Max) @ Vge, Ic | 2.62V @ 15V, 5A |
| Supplier Device Package | TO-252AA (DPAK) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 49ns/97ns |
| Switching Energy | 250µJ (on), 140µJ (off) |
| Test Condition | 480V, 5A, 100Ohm, 15V |
| Gate Charge | 19 nC |
| Current - Collector (Ic) (Max) | 9 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 18 A |
| Power - Max | 38 W |
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