IRG4RC10K
IGBT 600V 9A 38W DPAKManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IRG4RC10K is a 600V, 9A Insulated Gate Bipolar Transistor (IGBT) designed for surface mount applications. This component features a maximum collector power dissipation of 38W and is housed in a TO-252AA (DPAK) package. Key electrical parameters include a collector current (Ic) of 9A, a pulsed collector current (Icm) of 18A, and a gate charge of 19 nC. The on-state voltage (Vce(on)) is a maximum of 2.62V at 15V gate-emitter voltage and 5A collector current. Switching characteristics are defined by an on-state delay (Td(on)) of 11ns and an off-state delay (Td(off)) of 51ns at 25°C, with switching energies of 160µJ (on) and 100µJ (off) under test conditions of 480V, 5A, 100 Ohm, and 15V. The device operates across a temperature range of -55°C to 150°C (TJ). This IGBT is suitable for various industrial applications, including power supplies and motor control.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.62V @ 15V, 5A |
| Supplier Device Package | TO-252AA (DPAK) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 11ns/51ns |
| Switching Energy | 160µJ (on), 100µJ (off) |
| Test Condition | 480V, 5A, 100Ohm, 15V |
| Gate Charge | 19 nC |
| Current - Collector (Ic) (Max) | 9 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 18 A |
| Power - Max | 38 W |
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