IRG4PSH71UD
IGBT 1200V 99A 350W SUPER247Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IRG4PSH71UD is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component features a 1200V collector-emitter breakdown voltage and a continuous collector current rating of 99A, with a pulsed capability of 200A. The device offers a maximum power dissipation of 350W and a low on-state voltage of 2.7V at 15V gate-emitter voltage and 70A collector current. Optimized switching characteristics include a typical turn-on delay of 46ns and turn-off delay of 250ns at 25°C, with associated switching energies of 8.8mJ (on) and 9.4mJ (off). The IRG4PSH71UD is housed in a SUPER-247™ (TO-274AA) package suitable for through-hole mounting and operates across a temperature range of -55°C to 150°C. This IGBT is commonly utilized in industrial motor drives, power factor correction, and uninterruptible power supplies.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BagDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bag |
| Package / Case | TO-274AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 110 ns |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 70A |
| Supplier Device Package | SUPER-247™ (TO-274AA) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 46ns/250ns |
| Switching Energy | 8.8mJ (on), 9.4mJ (off) |
| Test Condition | 960V, 70A, 5Ohm, 15V |
| Gate Charge | 380 nC |
| Current - Collector (Ic) (Max) | 99 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 350 W |
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