IRG4PSH71KPBF
IGBT 1200V 78A 350W SUPER247Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IGBT, part number IRG4PSH71KPBF, is a high-performance insulated-gate bipolar transistor designed for demanding power applications. This device features a 1200V collector-emitter breakdown voltage and a continuous collector current capability of 78A, with a pulsed current rating of 156A. It offers a maximum power dissipation of 350W and a low on-state voltage (Vce(on)) of 3.9V at 15V gate-emitter voltage and 42A collector current. The IRG4PSH71KPBF exhibits typical switching times of 45ns turn-on and 220ns turn-off at 25°C, with associated switching energies of 2.35mJ (on) and 3.14mJ (off) under specified test conditions. This component is housed in a SUPER-247™ (TO-274AA) package with a through-hole mounting type, suitable for operation across a temperature range of -55°C to 150°C. It is commonly utilized in industrial automation, power factor correction, and motor drive applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BagDownload Free CAD Model:
Technical Details:
| Packaging | Bag |
| Package / Case | TO-274AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 42A |
| Supplier Device Package | SUPER-247™ (TO-274AA) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 45ns/220ns |
| Switching Energy | 2.35mJ (on), 3.14mJ (off) |
| Test Condition | 960V, 42A, 5Ohm, 15V |
| Gate Charge | 410 nC |
| Current - Collector (Ic) (Max) | 78 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 156 A |
| Power - Max | 350 W |
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