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IRG4PSC71KD

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IRG4PSC71KD

IGBT 600V 85A 350W SUPER247

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies IRG4PSC71KD is a 600V, 85A Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This component features a 350W power dissipation capability and a 200A pulsed collector current (Icm). The SUPER-247™ (TO-274AA) package facilitates efficient thermal management for through-hole mounting. Key electrical characteristics include a low on-state voltage (Vce(on)) of 2.3V at 15V gate-source voltage and 60A collector current, and a gate charge of 340 nC. Switching performance is characterized by a reverse recovery time (trr) of 82 ns and switching energies of 3.95mJ (on) and 2.33mJ (off) under specified test conditions. The IRG4PSC71KD is suitable for use in industrial motor drives, uninterruptible power supplies (UPS), and power factor correction circuits. Operating temperature range is from -55°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BagDatasheet:
Technical Details:
PackagingBag
Package / CaseTO-274AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)82 ns
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 60A
Supplier Device PackageSUPER-247™ (TO-274AA)
IGBT Type-
Td (on/off) @ 25°C82ns/282ns
Switching Energy3.95mJ (on), 2.33mJ (off)
Test Condition480V, 60A, 5Ohm, 15V
Gate Charge340 nC
Current - Collector (Ic) (Max)85 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)200 A
Power - Max350 W

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